2010 International Conference on Enabling Science and Nanotechnology (ESciNano), 1-3 December, 2010, KLCC, MALAYSIA
Raman and Photoluminescence Spectroscopy Studies On Porous Silicon Nanostructures , N.A. Asli * a b, S.F.M. Yusop a
a,b,
M. Rusop
b and S. Abdullah
a,b
Faculty of Applied Sciences; b
NANO-SciTech Centre;
Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia. *Email:
[email protected]
In this work, the study of photoluminescence (PL) and Raman spectroscopy of porous silicon nanostructures (NPSi) have been carried out. The samples were prepared by photo electrochemical anodization method using p-type silicon wafer based. Photoluminescence measurement of NPSi shows increase of PL intensity and blue shift with increasing of etching time. The varies etching time from 20 min to 40 min producedPL emission at a range of 550800 nm which is
in the range of visible
PL band [Fig. 1). While Raman Spectroscopy
measurement shows the spectra were symmetry and broaden when etching time increase from 20 min to 40 min F [ ig. 2]. It may due to lattice mismatch strain and part of distortion [ 1] when porous layer form with increasing the etching time. The photon energy and full half width maximum (FWHM) measurement were carried out to study the optical properties ofNPSi which can be used to study the quantum confinement effect.
ESciNano 2010 - http://www.tke.utm.my/mine/escinano2010
978-1-4244-8854-4/10/$26.00 ©2010 IEEE
2010 International Conference on Enabling Science and Nanotechnology (ESciNano), 1-3 December, 2010, KLCC, MALAYSIA
References [ 1]
S.Monatas, F.Agullo-Rueda, J.O.Mor'eno, F.Ben-hander and J.M.Martin' ez-Ouart. J. Thin
Solid Film, vol. 401, pp.306-309, 2001.
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Wavelength (nm) Fig. 1. Photoluminescence spectra ofNPSi where etch from 20 to 40 min
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Raman shift (em-') Fig. 2. Raman spectra ofNPSi where etch from 20 to 40 min
ESciNano 2010 - http://www.tke.utm.my/mine/escinano2010
